Stuart Sieg

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +14

Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices

H. Jagannathan, Brett D. Anderson, C-W. Sohn et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +16

EUV patterning successes and frontiers

Nelson Felix, Dan Corliss, Karen Petrillo et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2016 · 25 citations

Engineering, Electrical Engineering, Materials Science +15