X. P. Wang

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Non-volatile Memory, Engineering, Oxidation Resistance +17

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

L. Goux, X. P. Wang, Y. Y. Chen et al. · Electrochemical and Solid-State Letters · 2011 · 51 citations

Materials Science, Electrical Engineering, Engineering +14

Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM

Y. Y. Chen, Geoffrey Pourtois, X. P. Wang et al. · 2011 · 19 citations

Ni Filaments, Non-volatile Memory, Engineering +20

Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response

Sergiu Clima, Geoffrey Pourtois, N. Menou et al. · Microelectronic Engineering · 2009 · 10 citations

Materials Engineering, Materials Science, Epitaxial Growth +7