Hanghai Du

High-Performance E-Mode <i>p</i>-Channel GaN FinFET on Silicon Substrate With High <i>I</i> _ON/<i>I</i> _OFF and High Threshold Voltage

Hanghai Du, Zhihong Liu, Lu Hao et al. · IEEE Electron Device Letters · 2022 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

Hanghai Du, Zhihong Liu, Hao Lü et al. · IEEE Electron Device Letters · 2023 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Oxygen annealing impact on <b> <i>β</i> </b>-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Yuanjie Lv, Hongyu Liu, Yuangang Wang et al. · Applied Physics Letters · 2020 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Huake Su, Tao Zhang, Shengrui Xu et al. · Applied Physics Letters · 2022 · 22 citations

Engineering, Materials Engineering, Materials Science +17

GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art <i>f_T </i> × <i>L_G </i> Value

Hanghai Du, Jincheng Zhang, Hong Zhou et al. · IEEE Transactions on Electron Devices · 2022 · 20 citations

Engineering, Electrical Engineering, Materials Science +17