J. H. Baek

Scattering rates for holes near the valence-band edge in semiconductors

T. Brudevoll, Tor A. Fjeldly, J. H. Baek et al. · Journal of Applied Physics · 1990 · 86 citations

Engineering, Electrical Engineering, Physics +17

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov et al. · Applied Physics Letters · 2017 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Deterministic domain formation observed in ferroelectrics by electrostatic force microscopy

Sungchul Shin, J. H. Baek, Junsung Hong et al. · Journal of Applied Physics · 2004 · 18 citations

Natural Sciences, Materials Science, Physics +17

Highly Integrated InGaN/GaN Semipolar Micro-Pyramid Light-Emitting Diode Arrays by Confined Selective Area Growth

Si‐Young Bae, Dong-Jun Kim, Dong‐Seon Lee et al. · Electrochemical and Solid-State Letters · 2011 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +13

High-power single-chip InGaN blue light-emitting diode with 3.3 W output power

Tak Jeong, J. H. Baek, Jun‐Seok Ha et al. · Electronics Letters · 2012 · 12 citations

Engineering, Electrical Engineering, Materials Science +17