Martin Ostermayr

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +17

The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

T. Nirschl, Pengzhan Wang, C. E. Webe et al. · 2005 · 72 citations

Engineering, Computer Engineering, Electrical Engineering +17

Scaling of 32nm low power SRAM with high-K metal gate

Haining Yang, Robert Wong, R. Hasumi et al. · 2008 · 50 citations

Engineering, Computer Engineering, Electrical Engineering +16

Competitive and cost effective high-k based 28nm CMOS technology for low power applications

F. Arnaud, Aaron Thean, M. Eller et al. · 2009 · 44 citations

Engineering, Computer Engineering, Electrical Engineering +14

Investigation of Increased Multi-Bit Failure Rate Due to Neutron Induced SEU in Advanced Embedded SRAMs

Georg Georgakos, Peter Huber, Martin Ostermayr et al. · 2007 · 42 citations

Engineering, Computer Engineering, Electrical Engineering +17