The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

Abstract

This work presents tunneling field effect transistors (TFET) fabricated with 130nm and 90nm process flows. Good performance of the TFET is achieved. A novel mixed TFET/CMOS (TCMOS) logic family exhibits the advantages with respect to power consumption. For the first time experimental results are presented for a TCMOS ring-oscillator based on a p-channel MOSFET and n-channel TFET. The benefits of the TFET used in analog circuits are outlined.