2005 · 72 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesAnalog Integrated CircuitsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsMixed-signal Integrated Circuit DesignCmos Analog Circuit DesignCmos Analog Integrated CircuitsCmos Logic CircuitsCmos Logic DesignLow-voltage Cmos DesignPower ConsumptionTunneling Field-effect TransistorsUltra-low-voltage Circuit Design
This work presents tunneling field effect transistors (TFET) fabricated with 130nm and 90nm process flows. Good performance of the TFET is achieved. A novel mixed TFET/CMOS (TCMOS) logic family exhibits the advantages with respect to power consumption. For the first time experimental results are presented for a TCMOS ring-oscillator based on a p-channel MOSFET and n-channel TFET. The benefits of the TFET used in analog circuits are outlined.
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Lateral interband tunneling transistor in silicon-on-insulator
C. Aydin, A. Zaslavsky, Serge Luryi et al. · Applied Physics Letters · 2004 · 144 citations
A vertical MOS-gated Esaki tunneling transistor in silicon
W. Hänsch, C Fink, Jörg Schulze et al. · Thin Solid Films · 2000 · 112 citations
Engineering, Electrical Engineering, Electronic Materials +9
Simulation of the Esaki-tunneling FET
Pengfei Wang, Thomas R. Nirschl, D. Schmitt‐Landsiedel et al. · Solid-State Electronics · 2003 · 43 citations