Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

Yongsik Kim, Minkyung Bae, Woojoon Kim, +6

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +13

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

Sung‐Chul Kim, Yong Woo Jeon, Yongsik Kim, +11

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPositive Bias Stresses +12

Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability

Yongsik Kim, Sung‐Chul Kim, Woojoon Kim, +6

IEEE Transactions on Electron Devices

EngineeringOptoelectronic DevicesThin Film Process TechnologySemiconductor DeviceSemiconductors +14

Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Minkyung Bae, Daeyoun Yun, Yongsik Kim, +7

IEEE Electron Device Letters

Materials ScienceDevice ModelingElectrical EngineeringSemiconductorsElectronic Devices +13

Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

Minkyung Bae, Yongsik Kim, Dongsik Kong, +6

IEEE Electron Device Letters

EngineeringAnalytical DrainSemiconductor MaterialsGate Capacitance ModelsSemiconductor Device +15

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Sang‐Won Lee, Kichan Jeon, Jun‐Hyun Park, +12

Applied Physics Letters

Materials ScienceBipolar Ac StressElectrical EngineeringElectrical Stress-induced InstabilityEngineering +13

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

Jaeman Jang, Jae Chul Park, Dongsik Kong, +5

IEEE Transactions on Electron Devices

Non-volatile MemoryThin-film TransistorEngineeringEmerging Memory TechnologyElectronic Devices +14

Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through $C$– $V$ Characterization

Hagyoul Bae, Sung‐Chul Kim, Minkyung Bae, +7

IEEE Electron Device Letters

Materials ScienceFormula Formulatype=Material AnalysisEngineeringOxide Electronics +7

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

Dongsik Kong, Hyun-Kwang Jung, Yongsik Kim, +5

IEEE Electron Device Letters

Materials ScienceElectrical EngineeringElectronic DevicesEngineeringElectronic Materials +12

Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Sangwon Lee, Yong Woo Jeon, Sung‐Chul Kim, +2

Solid-State Electronics

Materials ScienceDevice ModelingElectrical EngineeringEngineeringOxide Electronics +7