Daeyoun Yun

Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Minkyung Bae, Daeyoun Yun, Yongsik Kim et al. · IEEE Electron Device Letters · 2012 · 52 citations

Materials Science, Device Modeling, Electrical Engineering +15

Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors

Hagyoul Bae, Sungwoo Jun, Choon Hyeong Jo et al. · IEEE Electron Device Letters · 2012 · 35 citations

Engineering, Conductance Method, Semiconductor Device +17

Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs With Parasitic Junction Current Method

Hagyoul Bae, Seok Cheon Baek, Sunyeong Lee et al. · IEEE Electron Device Letters · 2010 · 15 citations

Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs

Hagyoul Bae, Jaeman Jang, Ja Sun Shin et al. · IEEE Electron Device Letters · 2011 · 14 citations

Device Modeling, Electrical Engineering, Semiconductor Device +8

A Novel Capacitorless DRAM Cell Using Superlattice Bandgap-Engineered (SBE) Structure With 30-nm Channel Length

Sunyeong Lee, Ja Sun Shin, Jaeman Jang et al. · IEEE Transactions on Nanotechnology · 2011 · 14 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17