R. A. Schweinfurth

A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell

Scott E. Thompson, N. Anand, M Armstrong et al. · 2003 · 243 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects

S. Tyagi, Morteza S. Alavi, R. Bigwood et al. · 2002 · 150 citations

Engineering, Computer Engineering, Electrical Engineering +13

An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V

Scott E. Thompson, Morteza S. Alavi, Reza Arghavani et al. · 2002 · 62 citations

Engineering, Computer Engineering, Electrical Engineering +17

<i>In</i> <i>situ</i> pulsed laser deposition of superconducting Ba1−<i>x</i>K<i>x</i>BiO3 thin films

B. Moon, C. E. Platt, R. A. Schweinfurth et al. · Applied Physics Letters · 1991 · 54 citations

Natural Sciences, Materials Science, Physics +11

Electrical and magnetic transport properties of laser-deposited Ba1−<i>x</i>K<i>x</i>BiO3 thin films

R. A. Schweinfurth, C. E. Platt, Mark Teepe et al. · Applied Physics Letters · 1992 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +17