A. Erlebach

TCAD methodology for simulation of GaN-HEMT power devices

Stephan Strauss, A. Erlebach, Tommaso Cilento et al. · 2014 · 47 citations

Wide-bandgap Semiconductor, Engineering, Full Stress Simulation +18

Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

O. Penzin, Lee Smith, A. Erlebach et al. · IEEE Transactions on Electron Devices · 2017 · 28 citations

Ballistic Effects, Engineering, Fluid Mechanics +23

Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory

Gareth Roy, A. Ghetti, A. Benvenuti et al. · IEEE Transactions on Electron Devices · 2011 · 26 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

Simulation of RF Noise in MOSFETs Using Different Transport Models

Andreas Schenk, Bernhard Schmithüsen, Andreas Wettstein et al. · 2003 · 17 citations

Device Modeling, Electrical Engineering, Engineering +14

Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress

F. M. Bufler, Alexander Tsibizov, A. Erlebach · IEEE Electron Device Letters · 2006 · 17 citations

Device Modeling, Electrical Engineering, Gate Length +14