Alex Paterson - Concepedia

Author

Alex Paterson

Applied Materials (United States)

Also Known As

A M Paterson, A. M. Paterson, A. Paterson, A.M. Paterson, Alex M Paterson, Alex M. Paterson, Alex Paterson

Publications

656

Citations

H-Index

Concepts

All Affiliations

Applied Materials (United States)Lam Research (United States)University of Michigan Sandia National Laboratories University of California, Los Angeles

About

Alex Paterson is an author at Applied Materials (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	584
2	Applied Physics	11	11	550
3	Natural Sciences	3	3	166
4	Education	1	1	27
5	Chemical Engineering	1	1	64

Alex Paterson

Publications

612

Citations

H-Index

Page 1

	Year	Citations
Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber Gregory A. Hebner, Edward V. Barnat, Paul Miller, Plasma Sources Science and Technology Electrical EngineeringLine-integrated Electron DensityEngineeringArgon Metastable DensityApplied Physics	2006	90
Spatial and frequency dependence of plasma currents in a 300 mm capacitively coupled plasma reactor Paul Miller, Edward V. Barnat, Gregory A. Hebner, Plasma Sources Science and Technology Electrical EngineeringPlasma ReactorEngineeringRf FieldsPhysics	2006	66
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions Chad M. Huard, Yiting Zhang, Saravanapriyan Sriraman, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Ar/cl2 PlasmasEngineeringElectron-beam LithographyAtomic Layer EtchingSilicon On Insulator	2017	64
Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas Chad M. Huard, Saravanapriyan Sriraman, Alex Paterson, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringPolymer OverlayerAtomic Layer EtchingSilicon On InsulatorPlasma Processing	2018	64
Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features Chad M. Huard, Yiting Zhang, Saravanapriyan Sriraman, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringPlasma PhysicsPlasma ProcessingPlasma ElectronicsTransport Phenomena	2017	60
Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles Yiting Zhang, Mark J. Kushner, Saravanapriyan Sriraman, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringPlasma SciencePlasma PhysicsEtch ProfilesPlasma Processing	2015	55
Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator Yiting Zhang, Chad M. Huard, Saravanapriyan Sriraman, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Plasma ElectronicsEngineeringPhysicsMicrofabricationNatural Sciences	2016	42
The impact of frequency mixing on sheath properties: Ion energy distribution and Vdc∕Vrf interaction Steven Shannon, D. J. Hoffman, Jang-Gyoo Yang, Journal of Applied Physics Dc Sheath PotentialEngineeringRadio FrequencyDefined Electron DensityNonlinear Sheath	2005	40
Three-dimensional measurements of plasma parameters in an inductively coupled plasma processing chamber Jia Han, Patrick Pribyl, Walter Gekelman, Physics of Plasmas EngineeringMeasurementPlasma ScienceEducationPlasma Processing Chamber	2019	27
RF discharge under the influence of a transverse magnetic field E. V. Barnat, Paul Miller, Alex Paterson Plasma Sources Science and Technology Electromagnetic WaveMagnetismElectrical EngineeringPlasma ElectronicsEngineering	2008	26

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