S. Kim

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 98 citations

Engineering, Electrical Engineering, Materials Science +16

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

K. Shinohara, D. Regan, I. Milosavljevic et al. · IEEE Electron Device Letters · 2011 · 86 citations

Engineering, Electrical Engineering, Materials Science +16

Self-aligned-gate GaN-HEMTs with heavily-doped n<sup>+</sup>-GaN ohmic contacts to 2DEG

K. Shinohara, D. Regan, A. Corrion et al. · 2012 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning

J. S. Moon, Robert Grabar, David F. Brown et al. · IEEE Electron Device Letters · 2016 · 45 citations

Engineering, Electrical Engineering, Microelectronics +16