E. Neyret

Electrical transport in <i>n</i>-type 4H silicon carbide

Julien Pernot, W. Zawadzki, Sylvie Contreras et al. · Journal of Applied Physics · 2001 · 121 citations

Natural Sciences, Materials Science, Physics +17

Free electron density and mobility in high-quality 4H–SiC

Julien Pernot, Sylvie Contreras, J. Camassel et al. · Applied Physics Letters · 2000 · 65 citations

Natural Sciences, Materials Science, Physics +16

4H-SiC: a material for high temperature Hall sensor

Sylvie Contreras, Jean Camassel, Julien Pernot et al. · Sensors and Actuators A Physical · 2002 · 27 citations

Engineering, Materials Engineering, Materials Science +12

SiC In-Situ Pre-Growth Etching: A Thermodynamic Study

E. Neyret, L. Di Cioccio, E. Blanquet et al. · Materials science forum · 2000 · 14 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

E. Neyret, Gabriel Ferro, Sandrine Juillaguet et al. · Materials Science and Engineering B · 1999 · 11 citations

Engineering, Materials Engineering, Materials Science +16