Concepedia

4H-SiC: a material for high temperature Hall sensor

Sylvie Contreras, Jean Camassel, Julien Pernot, E. Neyret, L. Di Cioccio, T. Billon

Sensors and Actuators A Physical · 2002 · 27 citations · 8 references

DOI

Concepts

References

8

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

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Electrical transport in <i>n</i>-type 4H silicon carbide

Julien Pernot, W. Zawadzki, Sylvie Contreras et al. · Journal of Applied Physics · 2001 · 121 citations

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Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in <i>n</i>-type 4H– and 6H–SiC

Hisaomi Iwata, Kohei M. Itoh · Journal of Applied Physics · 2001 · 100 citations

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Free electron density and mobility in high-quality 4H–SiC

Julien Pernot, Sylvie Contreras, J. Camassel et al. · Applied Physics Letters · 2000 · 65 citations

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Extension of the collision-time tensor to the case of inelastic scattering mechanisms:  Application to GaAs and GaN

Jean-Louis Farvacque · Physical review. B, Condensed matter · 2000 · 26 citations

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