Jean Camassel - Concepedia

Author

Jean Camassel

Université de Montpellier

Also Known As

Camassel, Jean, J. Camassel, J. J. Camassel, Jean Camassel

170

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Université de Montpellier Centre National de la Recherche Scientifique Université Claude Bernard Lyon 1 Institut de Microelectrònica de Barcelona Environnement, ville, société

About

Jean Camassel is an author at Université de Montpellier specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	24	442
2	Applied Physics	14	23	426
3	Materials Science	13	18	342
4	Materials Engineering	11	12	211
5	Electrical Engineering	5	5	82

Jean Camassel

Publications

503

Citations

H-Index

Page 1

	Year	Citations
Early stage formation of graphene on the C face of 6H-SiC Nicolas Camara, Gemma Rius, Jean-Roch Huntzinger, Applied Physics Letters Materials ScienceGraphene NanomeshesGraphene Quantum DotEngineeringPhysics	2008	43
Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC Marc Portail, A. Michon, S. Vézian, Journal of Crystal Growth Materials ScienceEngineeringElectric PropertiesGraphene FiberApplied Physics	2012	32
Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism Maher Soueidan, Gabriel Ferro, B. Nsouli, Crystal Growth & Design Materials EngineeringMaterials ScienceEngineeringNanoelectronicsGe−si Melt	2006	32
Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates Nicolas Camara, Antoine Tiberj, B. Jouault, Journal of Physics D Applied Physics Materials ScienceSemiconductorsGraphene NanomeshesGraphene-based Nano-antennasEngineering	2010	30
Effect of initial substrate conditions on growth of cubic silicon carbide Remigijus Vasiliauskas, Maya Marinova, Mikael Syväjärvi, Journal of Crystal Growth Materials EngineeringMaterials ScienceCubic Silicon CarbideEngineeringInitial Substrate Conditions	2011	28
4H-SiC: a material for high temperature Hall sensor Jean-Lοuis Robert, Sylvie Contreras, Jean Camassel, Sensors and Actuators A Physical Materials EngineeringElectrical EngineeringEngineeringApplied PhysicsThermal Sensor	2002	27
Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC Antoine Tiberj, Nicolas Camara, Philippe Godignon, Nanoscale Research Letters	2011	22
Multiscale investigation of graphene layers on 6H-SiC(000-1) Antoine Tiberj, Jean-Roch Huntzinger, Jean Camassel, Nanoscale Research Letters	2011	19
Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers W. Skorupa, D. Panknin, W. Anwand, Materials science forum Materials ScienceMaterials EngineeringEngineeringApplied PhysicsStructural Ceramic	2004	18
Optical properties of as‐grown and process‐induced stacking faults in 4H‐SiC Jean Camassel, Sandrine Juillaguet physica status solidi (b) EngineeringOptoelectronic DevicesElectronic PropertiesDefect ToleranceSemiconductor Nanostructures	2008	18

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