R. S. Johnson

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

R. S. Johnson, G. Lucovsky, Isreal Baumvol · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2001 · 182 citations

Materials Science, Materials Engineering, Chemical Engineering +14

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

L. W. Massengill, B.K. Choï, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2001 · 81 citations

Electrical Engineering, Ion Implantation, Engineering +12

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

G. Lucovsky, G. B. Rayner, Dongkyun Kang et al. · Applied Physics Letters · 2001 · 70 citations

Materials Science, Materials Engineering, Semiconductors +15

Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications

R. S. Johnson, Joon Goo Hong, Christopher L. Hinkle et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 46 citations

Engineering, Solid-state Chemistry, Gate Dielectric Applications +17

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

R. S. Johnson, H. Niimi, G. Lucovsky · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 45 citations

Materials Science, Electronic Devices, Germanium Surface +15