Gaurav Thareja

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

Masaharu Kobayashi, Gaurav Thareja, Masato Ishibashi et al. · Journal of Applied Physics · 2009 · 85 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang et al. · IEEE Electron Device Letters · 2006 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

Hyoung-Sub Kim, Injo Ok, Manhong Zhang et al. · Applied Physics Letters · 2006 · 62 citations

Engineering, Materials Engineering, Materials Science +17

High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

Jia Feng, Gaurav Thareja, Masaharu Kobayashi et al. · IEEE Electron Device Letters · 2008 · 57 citations

Engineering, Electrical Engineering, Materials Science +16

High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode

Gaurav Thareja, Saurabh Chopra, B. Adams et al. · IEEE Electron Device Letters · 2011 · 44 citations

Engineering, Electrical Engineering, Materials Science +16