Hyoung-Sub Kim - Concepedia

Author

Hyoung-Sub Kim

The University of Texas at Austin

Also Known As

Hyoung-Sub Kim

Publications

340

Citations

H-Index

Concepts

All Affiliations

The University of Texas at Austin Intel (United States)

About

Hyoung-Sub Kim is an author at The University of Texas at Austin specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	300
2	Applied Physics	10	10	300
3	Electrical Engineering	10	10	300
4	Materials Science	5	5	161
5	Materials Engineering	1	1	25

Hyoung-Sub Kim

Publications

315

Citations

H-Index

Page 1

	Year	Citations
Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringUltrathin Hfo2Thin Germanium	2006	62
Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Applied Physics Letters SemiconductorsSilicon/germanium IplsElectrical EngineeringSemiconductor TechnologyEngineering	2006	51
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer Hyoung-Sub Kim, M. Zhang, Feng Zhu, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesThin Germanium	2008	35
A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer Hyoung-Sub Kim, M. Zhang, Feng Zhu, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringInsb SubstratesEngineering	2008	29
Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Applied Physics Letters Electrical EngineeringEngineeringThin GermaniumDepletion-mode MosfetTan Gate Electrode	2006	26
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Han Zhao, Davood Shahrjerdi, Feng Zhu, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2008	25
Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric Han Zhao, Davood Shahrjerdi, Feng Zhu, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringStacked Hfalox∕hfo2 ResultsEngineering	2008	25
Hf O 2 -based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer Hyoung-Sub Kim, M. Zhang, Feng Zhu, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor DeviceHf O 2	2008	20
Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer Han Zhao, Hyoung-Sub Kim, Feng Zhu, Applied Physics Letters Electrical EngineeringGaas MoscapsEngineeringRf SemiconductorNanoelectronics	2007	15
Inversion-Type InP MOSFETs with EOT of 21 A Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric Han Zhao, Davood Shahrjerdi, Feng Zhu, Electrochemical and Solid-State Letters	2008	15

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