Concepedia

Hyoung-Sub Kim

HK

11

Publications

315

Citations

11

H-Index

2006

Active since

Affiliations

The University of Texas at Austin(Current)

Intel (United States)

Hyoung-Sub Kim is an author at The University of Texas at Austin specializing in electrical engineering, applied physics, and engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsNanoelectronicsMaterial ScienceElectronic EngineeringSemiconductorsThin FilmsOptoelectronics

Publications per year

2006–2008

11

Publications

11

Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

Hyoung-Sub Kim, Injo Ok, Manhong Zhang et al. · Applied Physics Letters · 2006 · 62 citations

Materials Science, Semiconductors, Electrical Engineering +15

Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

Hyoung-Sub Kim, Injo Ok, Manhong Zhang et al. · Applied Physics Letters · 2006 · 51 citations

Semiconductors, Silicon/germanium Ipls, Electrical Engineering +13

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung-Sub Kim, M. Zhang, Feng Zhu et al. · Applied Physics Letters · 2008 · 35 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Hyoung-Sub Kim, M. Zhang, Feng Zhu et al. · Applied Physics Letters · 2008 · 29 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Hyoung-Sub Kim, Injo Ok, Manhong Zhang et al. · Applied Physics Letters · 2006 · 26 citations

Electrical Engineering, Engineering, Thin Germanium +11

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