A. Gölz

Charge trapping in dry and wet oxides on N-type 6H–SiC studied by Fowler–Nordheim charge injection

E.G. Stein von Kamienski, F. Portheine, J. Stein et al. · Journal of Applied Physics · 1996 · 28 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Nonlinear optical spectroscopy of Si–heterostructure interfaces

C. Meyer, G. Lüpke, Z. G. Lü et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 21 citations

Ii-vi Semiconductor, Optical Materials, Engineering +14

Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs

Sigo Scharnholz, E. Stein von Kamienski, A. Gölz et al. · Materials science forum · 1998 · 20 citations

Electrical Engineering, Engineering, Planar 6H-sic Mosfets +7

Plasma-assisted formation of low defect density SiC–SiO2 interfaces

A. Gölz, G. Lucovsky, K. Koh et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 20 citations · Full text

Materials Science, Semiconductor Technology, Vicinal Sic Wafers +11

Effects of Ar and H2 annealing on the electrical properties of oxides on 6H SiC

E. Stein von Kamienski, A. Gölz, H. Kurz · Materials Science and Engineering B · 1995 · 19 citations

Materials Science, Materials Engineering, Electrical Engineering +7