Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs - Concepedia

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Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs

20

Citations

0

References

1998

Year

Sigo Scharnholz, E. Stein von Kamienski, A. Gölz, C. Leonhard, H. Kurz

Materials science forum

Electrical EngineeringEngineeringPlanar 6H-sic MosfetsBias Temperature InstabilityPower Semiconductor DeviceChannel MobilitySurface StepSemiconductor Device FabricationMicroelectronicsSemiconductor Device

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