K. Koh

Minimization of suboxide transition regions at Si–SiO2 interfaces by 900 °C rapid thermal annealing

G. Lucovsky, Aditi Banerjee, Bruce J. Hinds et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 41 citations

Materials Science, Oxide Heterostructures, Suboxide Transition Regions +14

Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al/sub 2/O/sub 3/ gate dielectric

J.H. Lee, K. Koh, N.I. Lee et al. · 2002 · 38 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Plasma-assisted formation of low defect density SiC–SiO2 interfaces

A. Gölz, G. Lucovsky, K. Koh et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 20 citations · Full text

Materials Science, Semiconductor Technology, Vicinal Sic Wafers +11

Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces

A. Gölz, G. Lucovsky, K. Koh et al. · Microelectronic Engineering · 1997 · 18 citations

Effect of Ar+ ion beam in the process of plasma surface modification of PET films

Jinho Hyun, Philip Barletta, K. Koh et al. · Journal of Applied Polymer Science · 2000 · 17 citations

Engineering, Polymer Chains, Responsive Polymers +21