Ryosuke Okuyama

Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

Ryosuke Okuyama, Ayumi Masada, Takeshi Kadono et al. · Japanese Journal of Applied Physics · 2017 · 36 citations

Ion Implantation, Engineering, Crystalline Defects +15

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu et al. · Sensors · 2019 · 24 citations · Full text

Materials Science, Electrical Engineering, Electronic Devices +15

Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors

Ryosuke Okuyama, Satoshi Shigematsu, Ryo Hirose et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2017 · 19 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

Hydrogen passivation for reduction of SiO₂/Si interface state density using hydrocarbon-molecular-ion-implanted silicon wafers

Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka‐Masada et al. · Japanese Journal of Applied Physics · 2020 · 18 citations · Full text

Hydrocarbon-molecular-ion-implanted Silicon Wafers, Hydrogen Passivation, Electrical Engineering +12

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

Ryosuke Okuyama, Ayumi Masada, Satoshi Shigematsu et al. · Japanese Journal of Applied Physics · 2017 · 16 citations · Full text

Bulk Crystalline Silicon, Engineering, Carbon-cluster-ion-implanted Defects +19