Kazunari Kurita

Infrared spectroscopy study of initial stages of oxidation of hydrogen-terminated Si surfaces stored in air

Michio Niwano, Jun-ichi Kageyama, Kazunari Kurita et al. · Journal of Applied Physics · 1994 · 236 citations

Surface Characterization, Engineering, Hydrogen-terminated Si +14

Proximity gettering of C₃H₅ carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

Kazunari Kurita, Takeshi Kadono, Ryousuke Okuyama et al. · Japanese Journal of Applied Physics · 2016 · 50 citations

Materials Science, Electrical Engineering, New Technique +15

Morphology of hydrofluoric acid and ammonium fluoride-treated silicon surfaces studied by surface infrared spectroscopy

Michio Niwano, Yoshihiko Takeda, Yoshihiro Ishibashi et al. · Journal of Applied Physics · 1992 · 36 citations

Nh4f Solution, Engineering, Surface Nanotechnology +16

Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

Ryosuke Okuyama, Ayumi Masada, Takeshi Kadono et al. · Japanese Journal of Applied Physics · 2017 · 36 citations

Ion Implantation, Engineering, Crystalline Defects +15

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu et al. · Sensors · 2019 · 24 citations · Full text

Materials Science, Electrical Engineering, Electronic Devices +15