Ayumi Onaka‐Masada

Proximity gettering of C₃H₅ carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

Kazunari Kurita, Takeshi Kadono, Ryousuke Okuyama et al. · Japanese Journal of Applied Physics · 2016 · 50 citations

Materials Science, Electrical Engineering, New Technique +15

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu et al. · Sensors · 2019 · 24 citations · Full text

Materials Science, Electrical Engineering, Electronic Devices +15

Hydrogen passivation for reduction of SiO₂/Si interface state density using hydrocarbon-molecular-ion-implanted silicon wafers

Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka‐Masada et al. · Japanese Journal of Applied Physics · 2020 · 18 citations · Full text

Hydrocarbon-molecular-ion-implanted Silicon Wafers, Hydrogen Passivation, Electrical Engineering +12

Proximity gettering of silicon wafers using CH₃O multielement molecular ion implantation technique

Ryo Hirose, Takeshi Kadono, Ryosuke Okuyama et al. · Japanese Journal of Applied Physics · 2018 · 15 citations · Full text

Engineering, Vacuum Device, Silicon On Insulator +16

Low-temperature annealing behavior of iron-related deep levels in n-type silicon wafers

Ayumi Onaka‐Masada, Takeshi Kadono, Noritomo Mitsugi et al. · Japanese Journal of Applied Physics · 2016 · 13 citations

Engineering, Iron-related Deep Level, Silicon On Insulator +18