M. Shinosky

Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies

F. Chen, D. Harmon, M. Shinosky et al. · Microelectronics Reliability · 2008 · 48 citations

Engineering, Electrical Engineering, Materials Science +14

Line edge roughness and spacing effect on low-k TDDB characteristics

F. Chen, J. R. Lloyd, Kaushik Chanda et al. · 2008 · 46 citations

Engineering, Materials Engineering, Materials Science +16

Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology

F. Chen, Kaushik Chanda, Inderbir S. Gill et al. · 2005 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

The Effect of Metal Area and Line Spacing on TDDB Characteristics of 45nm Low-k SiCOH Dielectrics

F. Chen, P. McLaughlin, J. Gambino et al. · 2007 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

New breakdown data generation and analytics methodology to address BEOL and mol dielectric TDDB process development and technology qualification challenges

Fen Chen, Carole Graas, M. Shinosky et al. · 2014 · 35 citations

Engineering, Electrical Engineering, Materials Engineering +17