Yasuhiro Nakasha

Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama et al. · IEEE Transactions on Electron Devices · 2016 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of 20-Gbps wireless data transmission at 300 GHz for KIOSK instant data downloading applications with InP MMICs

Ho-Jin Song, Toshihiko Kosugi, Hiroshi Hamada et al. · 2016 · 45 citations

Engineering, Communication, Electrical Engineering +17

Highly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs

Naoki Hara, Kozo Makiyama, Tsuyoshi Takahashi et al. · IEEE Transactions on Semiconductor Manufacturing · 2003 · 41 citations

Engineering, Computer Engineering, Electrical Engineering +17

$W$-band Transmitter and Receiver for 10-Gb/s Impulse Radio With an Optical-Fiber Interface

Yasuhiro Nakasha, Masaru Sato, Tatsuhiko Tajima et al. · IEEE Transactions on Microwave Theory and Techniques · 2009 · 33 citations

Engineering, Communication, Electrical Engineering +17

144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs

T. Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi et al. · 2004 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +16