Concepedia

Chomani Gaspe

CG

Statistics

Publications

8

Citations

224

H-Index

8

Active since

2007

Affiliations

University of Oklahoma(Current)

The University of Texas at Austin

Intel (United States)

University at Albany, State University of New York

Pennsylvania State University

Chomani Gaspe is an author at University of Oklahoma specializing in materials science, engineering, and semiconductor devices.

Publications per year

2007–2013

8

Publications

8

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Injo Ok, H. Kim, M. Zhang et al. · Applied Physics Letters · 2008 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Addressing the gate stack challenge for high mobility In<inf>x</inf>Ga<inf>1-x</inf>As channels for NFETs

N. Goel, Dawei Heh, S. Koveshnikov et al. · 2008 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO<inf>2</inf> gate stack

Jimin Huang, N. Goel, H. Zhao et al. · 2009 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Hyoung-Sub Kim, M. Zhang, Feng Zhu et al. · Applied Physics Letters · 2008 · 29 citations

Engineering, Electrical Engineering, Materials Science +14

InSb quantum-well structures for electronic device applications

M. Edirisooriya, T. D. Mishima, Chomani Gaspe et al. · Journal of Crystal Growth · 2008 · 23 citations · Full text

Engineering, Electrical Engineering, Physics +14

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