H. Zhao

InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides

H. Zhao, Yu Chen, Y. Wang et al. · IEEE Transactions on Electron Devices · 2011 · 88 citations

Electrical Engineering, Junction Structures, Engineering +11

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Injo Ok, H. Kim, M. Zhang et al. · Applied Physics Letters · 2008 · 53 citations

Electrical Engineering, Material Characteristics, Engineering +8

InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO<inf>2</inf> gate stack

Jimin Huang, N. Goel, H. Zhao et al. · 2009 · 39 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung-Sub Kim, M. Zhang, Feng Zhu et al. · Applied Physics Letters · 2008 · 35 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Hyoung-Sub Kim, M. Zhang, Feng Zhu et al. · Applied Physics Letters · 2008 · 29 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12