Seiji Yaegassi

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Masaya Okada, Y. Saitoh, Mitsunori Yokoyama et al. · Applied Physics Express · 2010 · 61 citations

Engineering, Electrical Engineering, Materials Science +16

A Robust All-Wet-Etching Process for Mesa Formation of InGaAs–InP HBT Featuring High Uniformity and High Reproducibility

Masaki Yanagisawa, Kenji Kotani, Takeshi Kawasaki et al. · IEEE Transactions on Electron Devices · 2004 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi et al. · Scientific Reports · 2018 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Reliability of InGaAs/InP HBTs with InP passivation structure

Ryuji Yamabi, Kenji Kotani, Takeshi Kawasaki et al. · 2003 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates

Seiji Yaegassi, Masaya Okada, Yuu Saitou et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2010 · 13 citations

Engineering, Electrical Engineering, Materials Science +16