Yasunori Tateno

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

T. Kikkawa, Miyuki Nagahara, Naoya Okamoto et al. · 2002 · 76 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gm Dispersion +12

An over 200-W output power GaN HEMT push-pull amplifier with high reliability

T. Kikkawa, Toru Maniwa, Hiroyuki Hayashi et al. · 2004 · 71 citations

Wide-bandgap Semiconductor, Electrical Engineering, W-cdma Systems +12

Epitaxial graphene formation on 3C-SiC/Si thin films

Maki Suemitsu, Sai Jiao, Hirokazu Fukidome et al. · Journal of Physics D Applied Physics · 2014 · 41 citations

Materials Science, Semiconductors, Graphene Nanomeshes +12

High temperature operation of AlGaN/GaN HEMT

N. Adachi, Yasunori Tateno, Shinya Mizuno et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

T. Kikkawa, Miyuki Nagahara, T. Kimura et al. · 2003 · 23 citations

Electrical Engineering, Engineering, Gan Cap Layer +11