B. J. Sapjeta

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

J. Kwo, M. Hong, A. R. Kortan et al. · Journal of Applied Physics · 2001 · 262 citations

Engineering, Materials Engineering, Materials Science +17

An in-plane anisotropic organic semiconductor based upon poly(3-hexyl thiophene)

Karl Amundson, B. J. Sapjeta, Andrew J. Lovinger et al. · Thin Solid Films · 2002 · 75 citations

Natural Sciences, Chemistry, Materials Science +14

Interface reactions of high-κ Y2O3 gate oxides with Si

B. Busch, J. Kwo, M. Hong et al. · Applied Physics Letters · 2001 · 61 citations

Engineering, Chemistry, Materials Science +16

Polarized Electroluminescence from Aligned Chromophores by the Friction Transfer Method

X. L. Chen, Zhi-qiang Bao, B. J. Sapjeta et al. · Advanced Materials · 2000 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +17

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

J. M. Hergenrother, G. D. Wilk, T. Nigam et al. · 2001 · 19 citations

Engineering, Electrical Engineering, Materials Science +14