Andrea Arias

GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

K. Shinohara, Casey King, Andrew D. Carter et al. · IEEE Electron Device Letters · 2018 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS

Miguel Urteaga, A. Carter, Zach Griffith et al. · 2016 · 28 citations

Wide-bandgap Semiconductor, Thz Photonics, Engineering +16

GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

K. Shinohara, C.A. King, Eric Regan et al. · 2019 · 24 citations

Wide-bandgap Semiconductor, Dual Gate Fets, Electrical Engineering +13

GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications

Vivek Mehrotra, Andrea Arias, Charles Neft et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2016 · 13 citations

Electrical Engineering, Gate Driver, Gan Monolithic Microwave +13

High performance N-polar GaN HEMTs with OIP3/P_dc ∼12dB at 10GHz

Andrea Arias, Petra Rowell, J. Bergman et al. · 2017 · 12 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8