Tokio Takahashi

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Masahiro Horita, Shinya Takashima, Ryo Tanaka et al. · Japanese Journal of Applied Physics · 2017 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Kazunobu Kojima, Shinya Takashima, Masaharu Edo et al. · Applied Physics Express · 2017 · 87 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama et al. · Applied Physics Express · 2017 · 85 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Potato spindle tuber viroid

Tokio Takahashi, T.O. Diener · Virology · 1975 · 69 citations

Vegetable Production

3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination

Xue‐Lun Wang, Xixi Zhao, Tokio Takahashi et al. · Nature Communications · 2023 · 57 citations · Full text