Fumikatsu Uesawa

Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Masaki Minami, Shigetaka Tomiya, Kenji Ishikawa et al. · Japanese Journal of Applied Physics · 2011 · 48 citations

Gan-based Optical Devices, Electrical Engineering, Optical Materials +15

Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2011 · 47 citations · Full text

Si Substrate, Engineering, Silicon On Insulator +18

Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Masaki Minami, Shigetaka Tomiya, Kenji Ishikawa et al. · Japanese Journal of Applied Physics · 2011 · 42 citations

Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes

Masanaga Fukasawa, Hiroyasu Matsugai, Takahiro Honda et al. · Japanese Journal of Applied Physics · 2013 · 20 citations

Engineering, Integrated Circuits, Vacuum Device +16

Dry-etch proximity function for model-based OPC beyond 65-nm node

Shunichiro Sato, Ken Ozawa, Fumikatsu Uesawa · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 11 citations

Engineering, Electron-beam Lithography, Pattern Transfer +22