N.J. Son

Multi-gate devices for the 32nm technology node and beyond

Nadine Collaert, A. De Keersgieter, Abhisek Dixit et al. · 2007 · 60 citations

Engineering, Electrical Engineering, Electronic Materials +16

Multi-gate devices for the 32nm technology node and beyond

Nadine Collaert, A. De Keersgieter, Abhisek Dixit et al. · Solid-State Electronics · 2008 · 58 citations

Engineering, Electrical Engineering, Electronic Materials +16

Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

A. Veloso, Liesbeth Witters, M. Demand et al. · 2008 · 27 citations

Engineering, Electrical Engineering, Materials Science +15

A Unique Dual-Poly Gate Technology for 1.2-V Mobile DRAM with Simple In situ n<tex>$^+$</tex>-Doped Polysilicon

N.J. Son, Youngtek Oh, W. Kim et al. · IEEE Transactions on Electron Devices · 2004 · 16 citations

Engineering, Electrical Engineering, Materials Science +17