Aaron Vallett

Experimental demonstration of 100nm channel length In<inf>0.53</inf>Ga<inf>0.47</inf>As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

S. Mookerjea, D. K. Mohata, R. Krishnan et al. · 2009 · 122 citations

Engineering, Computer Engineering, Electrical Engineering +11

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

John J. Pekarik, J. Adkisson, Peter Gray et al. · 2014 · 100 citations

Engineering, Electrical Engineering, Microelectronics +16

Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

Aaron Vallett, Sharis Minassian, Phil Kaszuba et al. · Nano Letters · 2010 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

Nelson E. Lourenco, Robert L. Schmid, Kurt A. Moen et al. · 2012 · 28 citations

Medicine, Electrical Engineering, Microelectronics +16

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f_T/f_max of 340/410 GHz

Uppili S. Raghunathan, Saurabh Sirohi, V. Ruparelia et al. · 2022 · 14 citations

Engineering, Electrical Engineering, Electronic Materials +11