Uppili S. Raghunathan

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Ickhyun Song, Seung-Woo Jung, Nelson E. Lourenco et al. · IEEE Transactions on Nuclear Science · 2014 · 41 citations

Photonics, Electrical Engineering, Inverse-mode Sige Hbt +14

Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs

Kurt A. Moen, Partha Sarathi Chakraborty, Uppili S. Raghunathan et al. · IEEE Transactions on Electron Devices · 2012 · 39 citations

Engineering, Mixed-mode Degradation Mechanism, Semiconductor Device +16

Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers

Michael A. Oakley, Uppili S. Raghunathan, Brian R. Wier et al. · IEEE Transactions on Electron Devices · 2015 · 33 citations

Reliability, Device Modeling, Electrical Engineering +14

A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs

Brian R. Wier, Uppili S. Raghunathan, Partha Sarathi Chakraborty et al. · IEEE Transactions on Electron Devices · 2015 · 23 citations

Engineering, Semiconductor Device, Unexpected Stress +17

Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs

Uppili S. Raghunathan, Partha Sarathi Chakraborty, Tikurete G. Bantu et al. · IEEE Transactions on Electron Devices · 2015 · 22 citations

Engineering, Degradation Model, Electrical Stress Bias +17