Uppili S. Raghunathan

Author

Georgia Institute of Technology ORCID

Also Known As

U. S. Raghunathan, Uppili Raghunathan, Uppili S. Raghunathan

Publications

378

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Texas Instruments (United States)Defense Threat Reduction Agency United States Naval Research Laboratory Sotera Defense Solutions (United States)

About

Uppili S. Raghunathan is an author at Georgia Institute of Technology specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	252
2	Electrical Engineering	10	10	236
3	Applied Physics	7	7	144
4	Computer Engineering	1	1	33
5	Materials Engineering	1	1	22

Uppili S. Raghunathan

Publications

278

Citations

H-Index

Page 1

	Year	Citations
Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs Ickhyun Song, Seung-Woo Jung, Nelson E. Lourenco, IEEE Transactions on Nuclear Science PhotonicsElectrical EngineeringInverse-mode Sige HbtEngineeringRf Semiconductor	2014	41
Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs Kurt A. Moen, Partha Sarathi Chakraborty, Uppili S. Raghunathan, IEEE Transactions on Electron Devices EngineeringMixed-mode Degradation MechanismSemiconductor DeviceRf SemiconductorNanoelectronics	2012	39
Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers Michael A. Oakley, Uppili S. Raghunathan, Brian R. Wier, IEEE Transactions on Electron Devices ReliabilityDevice ModelingElectrical EngineeringSige HbtEngineering	2015	33
A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs Brian R. Wier, Uppili S. Raghunathan, Partha Sarathi Chakraborty, IEEE Transactions on Electron Devices EngineeringSemiconductor DeviceUnexpected StressRf SemiconductorNanoelectronics	2015	23
Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs Uppili S. Raghunathan, Partha Sarathi Chakraborty, Tikurete G. Bantu, IEEE Transactions on Electron Devices EngineeringDegradation ModelElectrical Stress BiasAccumulated Stress DamageMixed-mode Damage	2015	22
Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures Hanbin Ying, Jason Dark, Anup P. Omprakash, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringQuasi-ballistic TransportEngineeringPhysics	2018	22
An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers Ickhyun Song, Uppili S. Raghunathan, Nelson E. Lourenco, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringRf SemiconductorSet-mitigated Rf MixersLocal Oscillator	2016	18
Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology Saeed Zeinolabedinzadeh, Ickhyun Song, Uppili S. Raghunathan, IEEE Transactions on Nuclear Science Radar75-110 GhzSingle Event TransientsEngineeringRadio Frequency	2015	16
SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients Zachary E. Fleetwood, Adrian Ildefonso, George N. Tzintzarov, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringSige Hbt ProfilesPhysics	2017	15
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f<sub>T</sub>/f<sub>max</sub> of 340/410 GHz Uppili S. Raghunathan, Saurabh Sirohi, V. Ruparelia,	2022	14

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