Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f_T/f_max of 340/410 GHz

Abstract

We report on the recent addition of an improved high performance (HP) NPN HBT to GF’s 90nm BiCMOS SiGe 9HP technology. The HP NPN with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of 340/410 GHz and medium breakdown (MB) NPN with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /BV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CBO</inf> of 150 GHz / 8.4 V have been developed as new feature options within the technology. As the improvements are made without altering the integration, the full suite of passive and CMOS elements from the original process are still available. This work presents the measured enhancements in the device performance along with the gains at the circuit level.