B. Schöttker

The near band edge photoluminescence of cubic GaN epilayers

D. J. As, F. Schmilgus, C. Wang et al. · Applied Physics Letters · 1997 · 152 citations

Materials Science, Photoluminescence, Engineering +13

Structural properties and Raman modes of zinc blende InN epitaxial layers

A. Tabata, Alisson Padilha de Lima, L. K. Teles et al. · Applied Physics Letters · 1999 · 94 citations · Full text

Materials Science, Semiconductors, Structural Properties +12

Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy

Alisson Padilha de Lima, A. Tabata, J. R. Leite et al. · Journal of Crystal Growth · 1999 · 55 citations

Materials Engineering, Materials Science, Engineering +6

Optical constants of cubic GaN in the energy range of 1.5–3.7 eV

Ulrich Köhler, D. J. As, B. Schöttker et al. · Journal of Applied Physics · 1999 · 53 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

Mechanisms of optical gain in cubic gallium nitrite

J. Holst, L. Eckey, A. Hoffmann et al. · Applied Physics Letters · 1998 · 47 citations · Full text

Wide-bandgap Semiconductor, Photonics, Optical Materials +12