Timothy J. Tredwell - Concepedia

Author

Timothy J. Tredwell

Kodak (United States)

Also Known As

T. J. Tredwell, T. Tredwell, T.J. Tredwell, Timothy J. Tredwell, Timothy John Tredwell, Timothy Tredwell

Publications

Citations

H-Index

Concepts

All Affiliations

Kodak (United States)Carestream (United States)Eastman Chemical Company (United States)Kyung Hee University University of Rochester

About

Timothy J. Tredwell is an author at Kodak (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	767
2	Applied Physics	15	15	618
3	Computer Engineering	7	7	133
4	Health Sciences	1	1	14
5	Natural Sciences	1	1	35

Timothy J. Tredwell

Publications

815

Citations

H-Index

Page 1

	Year	Citations
Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity Md Delwar Hossain Chowdhury, Mallory Mativenga, Jae Gwang Um, IEEE Transactions on Electron Devices EngineeringEnvironmental StabilityThin Film Process TechnologySemiconductorsSingle-layer Passivated Tfts	2015	87
1/f Noise in (Hg, Cd)Te photodiodes S. P. Tobin, S. Iwasa, Timothy J. Tredwell IEEE Transactions on Electron Devices PhotonicsElectrical EngineeringPhotoelectric SensorEngineeringOptical Properties	1980	83
The pinned photodiode for an interline-transfer CCD image sensor B.C. Burkey, W.-C. Chang, J. Littlehale, Electrical EngineeringInterline-transfer CcdEngineeringPhotoelectric SensorHigh Charge Capacity	1984	73
Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a- IGZO TFT by TCAD Simulation Mohammad Masum Billah, Md Delwar Hossain Chowdhury, Mallory Mativenga, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Materials	2016	73
Determination of interface-state parameters in a MOS capacitor by DLTS Timothy J. Tredwell, C.R. Viswanathan Solid-State Electronics Device ModelingInterface-state ParametersElectrical EngineeringEngineeringApplied Physics	1980	51
Phonon-Induced Enhancement of the Superconducting Energy Gap Timothy J. Tredwell, E. H. Jacobsen Physical Review Letters	1975	48
Steady-state photocarrier collection in silicon imaging devices James P. Lavine, Eugene A. Trabka, B.C. Burkey, IEEE Transactions on Electron Devices Imaging Site DiffuseEngineeringSolid-state ImagersComputational IlluminationImage Sensor	1983	48
Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure Mallory Mativenga, Di Geng, Jeff Hsin Chang, IEEE Electron Device Letters EngineeringFast-switching Thin-film TransistorsIntegrated CircuitsEtch Stopper ManufacturedSemiconductor Device	2012	38
Interface-state parameter determination by deep-level transient spectroscopy Timothy J. Tredwell, C.R. Viswanathan Applied Physics Letters Device ModelingDeep-level Transient SpectroscopyElectrical EngineeringMos CapacitorEngineering	1980	35
Threshold voltage in short-channel MOS devices C.R. Viswanathan, B.C. Burkey, G. Lubberts, IEEE Transactions on Electron Devices Device ModelingLow-power ElectronicsElectrical EngineeringSemiconductor TechnologyEngineering	1985	33

Page 1