Jae Gwang Um

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

P. Migliorato, Md Delwar Hossain Chowdhury, Jae Gwang Um et al. · Applied Physics Letters · 2012 · 121 citations

Engineering, Nbis Stress Time, Optoelectronic Devices +21

Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

Yong-Hwan Kim, Eunji Lee, Jae Gwang Um et al. · Scientific Reports · 2016 · 119 citations · Full text

Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding

Jae Gwang Um, Duk Young Jeong, Younghun Jung et al. · Advanced Electronic Materials · 2018 · 118 citations · Full text

Electrical Engineering, Electronic Devices, Flip Chip Bonding +15

Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Mallory Mativenga, Farjana Haque, Mohammad Masum Billah et al. · Scientific Reports · 2021 · 114 citations · Full text

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Md Delwar Hossain Chowdhury, Mallory Mativenga, Jae Gwang Um et al. · IEEE Transactions on Electron Devices · 2015 · 87 citations

Engineering, Environmental Stability, Thin Film Process Technology +16