Determination of interface-state parameters in a MOS capacitor by DLTS

Fast capacitance transient appartus: Application to ZnO and O centers in GaP <i>p-n</i> junctions

D. V. Lang · Journal of Applied Physics · 1974 · 604 citations

Engineering, Materials Engineering, Materials Science +17

Interface states in SiSiO2 interfaces

H.J. Deuling, E. Klausmann, A. Goetzberger · Solid-State Electronics · 1972 · 223 citations

Natural Sciences, Materials Science, Physics +14

Transient capacitance measurements of hole emission from interface states in MOS structures

Michael Schulz, N. M. Johnson · Applied Physics Letters · 1977 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

V. A two stage model for deep level capture

R. M. Gibb, Gregory J. Rees, Babu Thomas et al. · Philosophical magazine · 1977 · 91 citations

Natural Sciences, Physics, Electronic Materials +12

Transient capacitance measurements of interface states on the intentionally contaminated Si-SiO2 interface

Michael Schulz, E. Klausmann · Applied Physics A · 1979 · 87 citations

Engineering, Materials Engineering, Materials Science +16