P. Murugapandiyan

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, Shubham Tayal et al. · Microelectronics Journal · 2021 · 101 citations

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

P. Murugapandiyan, S. Ravimaran, J. William et al. · Superlattices and Microstructures · 2017 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

S. Baskaran, A. Mohanbabu, Saminathan Veerappan et al. · Journal of Electronic Materials · 2020 · 31 citations

Wide-bandgap Semiconductor, Electrical Engineering, Transient Analysis +5

DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

P. Murugapandiyan, S. Ravimaran, J. William · AEU - International Journal of Electronics and Communications · 2017 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +7

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

P. Murugapandiyan, A. Mohanbabu, V. Rajya Lakshmi et al. · Journal of Science Advanced Materials and Devices · 2020 · 28 citations · Full text