Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD) - Concepedia

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Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

31

Citations

23

References

2020

Year

S. Baskaran, A. Mohanbabu, Saminathan Veerappan, P. Murugapandiyan, Mohammed Wasim, Saravana Kumar Radhakrishnan, Praveen Pechimuthu, Yogesh Kumar Verma, Subash Navaneethan Vivekanandhan, E. Raju

Journal of Electronic Materials

Wide-bandgap SemiconductorElectrical EngineeringTransient AnalysisEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v Semiconductor

References

	Year	Citations

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