A. Mohanbabu

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

A. Mohanbabu, N. Mohankumar, D. Godwin Raj et al. · Superlattices and Microstructures · 2017 · 63 citations

Boost Converter Circuits, Electrical Engineering, Electronic Devices +8

Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

A. Mohanbabu, N. Anbuselvan, N. Mohankumar et al. · Solid-State Electronics · 2013 · 40 citations

Wide-bandgap Semiconductor, Algan/aln/gan Hemt Devices, Electrical Engineering +8

Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

S. Baskaran, A. Mohanbabu, N. Anbuselvan et al. · Superlattices and Microstructures · 2013 · 33 citations

Wide-bandgap Semiconductor, Algan/aln/gan Hemt Devices, Electrical Engineering +6

Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

S. Baskaran, A. Mohanbabu, Saminathan Veerappan et al. · Journal of Electronic Materials · 2020 · 31 citations

Wide-bandgap Semiconductor, Electrical Engineering, Transient Analysis +5

Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

A. Mohanbabu, N. Mohankumar, D. Godwin Raj et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 2017 · 28 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11