N. Mohankumar

Influence of Channel and Gate Engineering on the Analog and RF Performance of DG MOSFETs

N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar · IEEE Transactions on Electron Devices · 2010 · 205 citations

Electrical Engineering, Engineering, Vlsi Design +13

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

A. Mohanbabu, N. Mohankumar, D. Godwin Raj et al. · Superlattices and Microstructures · 2017 · 63 citations

Boost Converter Circuits, Electrical Engineering, Electronic Devices +8

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

D. Nirmal, P. Vijayakumar, Divya Mary Thomas et al. · Microelectronics Reliability · 2012 · 44 citations

Electrical Engineering, Engineering, Subthreshold Performance +8

Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

A. Mohanbabu, N. Anbuselvan, N. Mohankumar et al. · Solid-State Electronics · 2013 · 40 citations

Wide-bandgap Semiconductor, Algan/aln/gan Hemt Devices, Electrical Engineering +8

Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications

N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar · Microelectronics Reliability · 2009 · 35 citations

Electrical Engineering, Engineering, Rf Semiconductor +6