N. Mohankumar

Influence of Channel and Gate Engineering on the Analog and RF Performance of DG MOSFETs

N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar · IEEE Transactions on Electron Devices · 2010 · 206 citations

Engineering, Electrical Engineering, Analog Electronics +16

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

N. Mohankumar, D. Godwin Raj, Partha Sarkar et al. · Superlattices and Microstructures · 2017 · 64 citations

Engineering, Electrical Engineering, Materials Science +16

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

D. Nirmal, P. Vijayakumar, Divya Mary Thomas et al. · Microelectronics Reliability · 2012 · 44 citations

Engineering, Electrical Engineering, Materials Science +16

Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

N. Anbuselvan, N. Mohankumar, D. Godwinraj et al. · Solid-State Electronics · 2013 · 40 citations

Engineering, Electrical Engineering, Materials Science +16

Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions

Kalyan Koley, Binit Syamal, Atanu Kundu et al. · Microelectronics Reliability · 2012 · 36 citations

Engineering, Electrical Engineering, Materials Science +13