D. Godwin Raj

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

A. Mohanbabu, N. Mohankumar, D. Godwin Raj et al. · Superlattices and Microstructures · 2017 · 63 citations

Boost Converter Circuits, Electrical Engineering, Electronic Devices +8

Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

A. Mohanbabu, N. Mohankumar, D. Godwin Raj et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 2017 · 28 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

A. Mohanbabu, N. Mohankumar, D. Godwin Raj et al. · Physica E Low-dimensional Systems and Nanostructures · 2017 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

R. Saravana Kumar, A. Mohanbabu, N. Mohankumar et al. · International Journal of Electronics · 2017 · 19 citations

Semiconductor Technology, Electrical Engineering, Analogue/rf Applications +14

$$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

R. Saravana Kumar, A. Mohanbabu, N. Mohankumar et al. · Journal of Computational Electronics · 2017 · 15 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ga 0.3 +7