S. Ravimaran

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

P. Murugapandiyan, S. Ravimaran, J. William et al. · Superlattices and Microstructures · 2017 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

P. Murugapandiyan, S. Ravimaran, J. William · AEU - International Journal of Electronics and Communications · 2017 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +7

DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications

P. Murugapandiyan, S. Ravimaran, J. William et al. · Superlattices and Microstructures · 2017 · 20 citations

Electrical Engineering, Engineering, Rf Semiconductor +5

An Effective Non-Commutative Encryption Approach withOptimized Genetic Algorithm for Ensuring Data Protection inCloud Computing

Sachin Kumar, S. Ravimaran, M. M. Gowthul Alam · Computer Modeling in Engineering & Sciences · 2020 · 18 citations · Full text

Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

P. Murugapandiyan, S. Ravimaran, J. William · Journal of Science Advanced Materials and Devices · 2017 · 15 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13