Nicholas Tanen

Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · IEEE Electron Device Letters · 2018 · 300 citations

Materials Engineering, Electrical Engineering, Engineering +14

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode <i>β</i>-Ga2O3 vertical transistors

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · Applied Physics Letters · 2018 · 161 citations

Premature Transistor Breakdown, Electrical Engineering, Transistor Channels +14

Controlled Si doping of <b> <i>β</i> </b>-Ga2O3 by molecular beam epitaxy

Jonathan P. McCandless, Vladimir Protasenko, Bradley Morell et al. · Applied Physics Letters · 2022 · 40 citations

Oxide Heterostructures, Materials Engineering, Semiconductors +14

<i>γ</i>-phase inclusions as common structural defects in alloyed <i>β</i>-(Al<i>x</i>Ga1−<i>x</i>)2O3 and doped <i>β</i>-Ga2O3 films

Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko et al. · APL Materials · 2021 · 39 citations · Full text

Wide-bandgap Semiconductor, Engineering, Electronic Properties +20

Significantly reduced thermal conductivity in <b> <i>β</i> </b>-(Al0.1Ga0.9)2O3/Ga2O3 superlattices

Zhe Cheng, Nicholas Tanen, Celesta S. Chang et al. · Applied Physics Letters · 2019 · 30 citations · Full text

Wide-bandgap Semiconductor, Engineering, Thermal Conductivity +17