A. M. L. Theunissen - Concepedia

Author

A. M. L. Theunissen

Philips (Netherlands)

Also Known As

A M L Theunissen, A. M. L. Theunissen, A.M.L. Theunissen, Anton M.L. Theunissen

Publications

339

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)Philips (Finland)NXP (Netherlands)Philips (United States)

About

A. M. L. Theunissen is an author at Philips (Netherlands) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	299
2	Applied Physics	8	8	299
3	Chemistry	2	2	110
4	Natural Sciences	1	1	20
5	Chemical Engineering	1	1	40

A. M. L. Theunissen

Publications

339

Citations

H-Index

Page 1

	Year	Citations
Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si A. H. van Ommen, J. J. M. Ottenheim, A. M. L. Theunissen, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	1988	75
Ion beam synthesis of heteroepitaxial Si/CoSi2/Si structures A. H. van Ommen, C. W. T. Bulle‐Lieuwma, J. J. M. Ottenheim, Journal of Applied Physics Materials ScienceIon ImplantationBuried LayersEngineeringCrystalline Defects	1990	70
Hydrogenation during thermal nitridation of silicon dioxide A. E. T. Kuiper, M. F. C. Willemsen, A. M. L. Theunissen, Journal of Applied Physics EngineeringThermal NitridationNitrogen ProfilesChemistryNitrogen Incorporation	1986	40
Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures G. F. A. van de Walle, L.J. van IJzendoorn, A. A. van Gorkum, Thin Solid Films Materials EngineeringEngineeringPhysicsApplied PhysicsSilicene	1989	34
Diffusion of ion-implanted As in TiSi2 A. H. van Ommen, H. J. W. van Houtum, A. M. L. Theunissen Journal of Applied Physics Materials ScienceTisi2 FilmsIon ImplantationEngineeringCrystalline Defects	1986	28
Single crystalline CoSi2 layers formed by Co implantation into Si A. H. van Ommen, J. J. M. Ottenheim, C. W. T. Bulle‐Lieuwma, Applied Surface Science Materials ScienceEngineeringCo ImplantationApplied PhysicsSilicene	1989	27
Hydrogen profiling by proton-proton scattering M. F. C. Willemsen, A. M. L. Theunissen, A. E. T. Kuiper Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Hydrogen ProfilingNuclear PhysicsNatural SciencesSpectroscopyProton-coupled Electron Transfer	1986	20
Diffusion and strain relaxation in Si/Si1−Ge /Si structures studied with Rutherford backscattering spectrometry L.J. van IJzendoorn, G. F. A. van de Walle, A. A. van Gorkum, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms	1990	20
Thermal stability of strained Si/Si<sub>1-x</sub>Ge<sub>x</sub>/Si structures G. F. A. van de Walle, L.J. van IJzendoorn, A. A. van Gorkum, Semiconductor Science and Technology Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics	1990	14
Nucleation Phenomena during Titanium Silicon Reaction Ivo J. Raaijmakers, L.J. van IJzendoorn, A. M. L. Theunissen, MRS Proceedings Materials ScienceEngineeringApplied PhysicsNucleation PhenomenaNucleation	1989	11

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